BF579
BF579 is Silicon PNP Planar RF Transistor manufactured by Vishay.
Features
D High transition frequency D Low distortion
1 1
13 581 94 9280 9510527
13 581
BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol
- VCBO
- VCEO
- VEBO
- IC Ptot Tj Tstg Value 20 20 3 25 200 150
- 55 to +150 Unit V V V m A m W °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W
Document Number 85001 Rev. 3, 20-Jan-99
.vishay.de
- Fax Back +1-408-970-5600 1 (5)
BF579/BF579R
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions
- VCE = 20 V, VBE = 0
- VCB = 15 V, IE = 0
- VEB = 3 V, IC = 0
- IC = 1 m A, IB = 0
- VCE = 10 V,
- IC = 10 m A Symbol Min
- ICES
- ICBO
- IEBO
- V(BR)CEO 20 h FE 20 Typ Max Unit 100 m A 100 n A 10 m A V 90
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol f T Ccb F Gpb Min Typ 1750 0.55 3.4 16 Max Unit MHz p F d B d...