• Part: BF579R
  • Description: Silicon PNP Planar RF Transistor
  • Category: Transistor
  • Manufacturer: Vishay
  • Size: 66.90 KB
Download BF579R Datasheet PDF
Vishay
BF579R
BF579R is Silicon PNP Planar RF Transistor manufactured by Vishay.
Features D High transition frequency D Low distortion 1 1 13 581 94 9280 9510527 13 581 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol - VCBO - VCEO - VEBO - IC Ptot Tj Tstg Value 20 20 3 25 200 150 - 55 to +150 Unit V V V m A m W °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W Document Number 85001 Rev. 3, 20-Jan-99 .vishay.de - Fax Back +1-408-970-5600 1 (5) BF579/BF579R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions - VCE = 20 V, VBE = 0 - VCB = 15 V, IE = 0 - VEB = 3 V, IC = 0 - IC = 1 m A, IB = 0 - VCE = 10 V, - IC = 10 m A Symbol Min - ICES - ICBO - IEBO - V(BR)CEO 20 h FE 20 Typ Max Unit 100 m A 100 n A 10 m A V 90 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol f T Ccb F Gpb Min Typ 1750 0.55 3.4 16 Max Unit MHz p F d B d...