Datasheet4U Logo Datasheet4U.com

TSSF4500 - High Speed Infrared Emitting Diode

Description

TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

  • Package type: leaded.
  • Package form: side view.
  • Dimensions (L x W x H in mm): 4.5 x 4 x 4.8.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 12 MHz.
  • Good spectral matching with Si photodetectors.
  • Material ca.

📥 Download Datasheet

Datasheet Details

Part number TSSF4500
Manufacturer Vishay
File Size 90.39 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSSF4500 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
End of Life - Last Available Purchase Date: 28-July-2023 www.vishay.com TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 94 8688 DESCRIPTION TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 4.5 x 4 x 4.
Published: |