Description
TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
Features
- Package type: leaded.
- Package form: side view.
- Dimensions (L x W x H in mm): 4.5 x 4 x 4.8.
- Peak wavelength: λp = 890 nm.
- High reliability.
- High radiant power.
- High radiant intensity.
- Angle of half intensity: ϕ = ± 22°.
- Low forward voltage.
- Suitable for high pulse current operation.
- High modulation bandwidth: fc = 12 MHz.
- Good spectral matching with Si photodetectors.
- Material ca.