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TSSS2600 - Infrared Emitting Diode

Description

TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens.

Features

  • Package type: leaded.
  • Package form: side view.
  • Dimensions (L x W x H in mm): 3.6 x 2.2 x 5.
  • Peak wavelength: λp = 950 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 25°, horizontal.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Package matched with detector TEST2600.

📥 Download Datasheet

Datasheet Details

Part number TSSS2600
Manufacturer Vishay
File Size 101.26 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSSS2600 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com TSSS2600 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 94 8672 DESCRIPTION TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens. FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25°, horizontal • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with detector TEST2600 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.
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