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TSTS7300 - Infrared Emitting Diode

Description

TSTS7300 is an infrared, 950 nm emitting diode in GaAlAs multi quantum well (MQW) technology in a hermetically sealed TO-18 package with lens.

Features

  • Package type: leaded.
  • Package form: TO-18.
  • Dimensions (in mm): Ø 4.7.
  • Peak wavelength:.
  • p = 950 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity:  = ± 8°.
  • Low forward voltage.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number TSTS7300
Manufacturer Vishay
File Size 163.92 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSTS7300 Datasheet

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Full PDF Text Transcription

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Datasheet Values Refer to PCN-OPT-1177-2021-REV-0 www.vishay.com TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAlAs, MQW DESCRIPTION TSTS7300 is an infrared, 950 nm emitting diode in GaAlAs multi quantum well (MQW) technology in a hermetically sealed TO-18 package with lens. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • Peak wavelength: p = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity:  = ± 8° • Low forward voltage • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.
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