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TSTS7302 - GaAs IR Emitting Diodes

Description

The TSTS730.

series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package.

Their glass lenses provide a high radiant intensity without external optics.

Features

  • High radiant intensity.
  • Suitable for pulse operation.
  • Angle of half intensity ϕ = ± 12°.
  • Peak wavelength λp = 950 nm.
  • High reliability.
  • Good spectral matching to Si photodetectors.
  • Lead-free device 948642.

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Datasheet Details

Part number TSTS7302
Manufacturer Vishay
File Size 196.47 KB
Description GaAs IR Emitting Diodes
Datasheet download datasheet TSTS7302 Datasheet

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Full PDF Text Transcription

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VISHAY TSTS730. Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. Features • High radiant intensity • Suitable for pulse operation • Angle of half intensity ϕ = ± 12° • Peak wavelength λp = 950 nm • High reliability • Good spectral matching to Si photodetectors • Lead-free device 948642 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Tcase ≤ 25 °C tp/T = 0.
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