BAR64V-02V Description
Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz.
BAR64V-02V Key Features
- High reverse Voltage
- Space saving SOD523 package with low series inductance
- Small reverse capacitance
- High breakdown voltage
BAR64V-02V Applications
- For frequency up to 3 GHz