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BPV11 Datasheet PDF

Vishay BPV11

BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT BPV11 Vishay Semiconductors 200 PV - Power Dissipation (mW) 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig.
Part No. BPV11
Datasheet BPV11 Download
Manufacturer
Vishay
Description Silicon NPN Phototransistor
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BPV11 datasheet page 1 preview

DESCRIPTION

FEATURES

● Package type: leaded
● Package form: T-1¾
● Dimensions (in mm): Ø 5
● High photo sensitivity
● High radiant sensitivity
● Suitable for visible and near infrared radiation
● Fast response times
● Angle of half sensitivity:  = ± 15°
● Base terminal connected
● Material categorization: For definitions of compliance please see

APPLICATIONS

● Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT BPV11 Ica (mA) 10 Note
● Test condition see table “Basic Characteristics”  (deg) ± 15
●0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE BPV11 Note
● MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾

ABSOLUTE MAXIMUM RATINGS

(Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage...
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