Vishay BPV11F
BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 200 PV - Power Dissipation (mW) 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig.| Part No. | BPV11F |
|---|---|
| Datasheet | BPV11F Download |
| Manufacturer |  Vishay |
| Description | Silicon NPN Phototransistor |
| Buy | Stock & Price |
DESCRIPTION
Filter bandwidth is matched with 900 nm to 950 nm IR emitters.FEATURES
● Package type: leaded● Package form: T-1¾
● Dimensions (in mm): Ø 5
● High radiant sensitivity
● Daylight blocking filter matched with 940 nm emitters
● Fast response times
● Angle of half sensitivity: = ± 15°
● Base terminal connected
● Material categorization: For definitions of compliance please see
APPLICATIONS
● Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT BPV11F Ica (mA) 9 Note● Test condition see table “Basic Characteristics” (deg) ± 15
●0.5 (nm) 900 to 980 ORDERING INFORMATION ORDERING CODE BPV11F Note
● MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temp...
