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BPW77NA - Silicon NPN Phototransistor

General Description

BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens.

It is sensitive to visible and near infrared radiation.

Key Features

  • Package type: leaded.
  • Package form: TO-18.
  • Dimensions (in mm): Ø 4.7.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 10°.
  • Base terminal connected.
  • Hermetically sealed package.
  • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number BPW77NA
Manufacturer Vishay
File Size 136.00 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW77NA Datasheet

Full PDF Text Transcription (Reference)

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BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 94 8401 DESCRIPTION BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 10° • Base terminal connected • Hermetically sealed package • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW77NA Ica (mA) 7.