Download the BYG24J-E3 datasheet PDF.
This datasheet also covers the BYG24D-E3 variant, as both devices belong to the same fast avalanche smd rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low profile package.
Ideal for automated placement.
Glass passivated junction.
Low reverse current.
Soft recovery characteristics.
Fast reverse recovery time.
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C.
AEC-Q101 qualified.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for BYG24J-E3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BYG24J-E3. For precise diagrams, and layout, please refer to the original PDF.
BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3 www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier SMA (DO-214AC) PRIMARY CHARACTERISTICS IF(AV) VRRM IF...
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he SMD Rectifier SMA (DO-214AC) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr ER TJ max. Package 1.5 A 200 V, 400 V, 600 V 30 A 1.0 μA 1.25 V 140 ns 20 mJ 150 °C SMA (DO-214AC) Diode variation Single FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
BYG24J-E3 Datasheet
