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CPV362M4FPbF - Fast IGBT

General Description

The IGBT technology is the key to the advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com CPV362M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ 11 A 125 °C Supply voltage Power factor 360 VDC 0.8 Modulation depth See fig. 1 115 % VCE(on) (typical) at IC = 4.8 A, 25 °C Package 1.41 V SIP Circuit Three Phase Inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve RoHS COMPLIANT • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.