Vishay CPV362M4UPbF
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.| Part No. | CPV362M4UPbF |
|---|---|
| Datasheet | CPV362M4UPbF Download |
| Manufacturer |  Vishay |
| Description | Fast IGBT |
| Buy | Stock & Price |
FEATURES
● Fully isolated printed circuit board mount package● Switching-loss rating includes all “tail” losses
● HEXFRED® soft ultrafast diodes
● Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve RoHS COMPLIANT
● UL approved file E78996
● Designed and qualified for industrial level
● Material categorization: For definitions of compliance please see
DESCRIPTION
This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Isolation voltage ICM (1) ILM (2) IF IFM VGE VISOL Maximum power dissipation, each IGBT PD Operating junct...
