CPV364M4KPbF Overview
Description
The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
Key Features
- Short circuit rated ultrafast: Optimized for high speed > 5.0 kHz, and short circuit rated to 10 μs at 125 °C, VGE = 15 V RoHS
- Fully isolated printed circuit board mount COMPLIANT package
- Switching-loss rating includes all “tail” losses
- HEXFRED® soft ultrafast diodes
- UL approved file E78996
- Designed and qualified for industrial level
- Material categorization: For definitions of compliance please see
