Datasheet4U Logo Datasheet4U.com

CPV364M4KPbF - Fast IGBT

General Description

The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Short circuit rated ultrafast: Optimized for high speed > 5.0 kHz, and short circuit rated to 10 μs at 125 °C, VGE = 15 V RoHS.
  • Fully isolated printed circuit board mount.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CPV364M4KPBF IGBT SIP MODULE International Rectifier
CPV364M4K IGBT SIP MODULE International Rectifier
CPV364M4F IGBT SIP MODULE International Rectifier
CPV364M4U IGBT SIP MODULE International Rectifier
CPV364MF IGBT SIP MODULE Fast IGBT International Rectifier

Other Datasheets by Vishay

Part Number Description
CPV364M4FPbF Fast IGBT
CPV364M4UPbF Fast IGBT
CPV362M4FPbF Fast IGBT
CPV362M4UPbF Fast IGBT
CPV363M4KPbF IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com CPV364M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 11 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 13 A, 25 °C Package 1.8 V SIP Circuit Three Phase Inverter FEATURES • Short circuit rated ultrafast: Optimized for high speed > 5.