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CPV364M4UPbF - Fast IGBT

General Description

The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package.
  • Switching-loss rating includes all “tail” losses.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com CPV364M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.5 kW total) with TC = 90 °C TJ Supply voltage Power factor Modulation depth (see fig. 1) VCE(on) (typical) at IC = 10 A, 25 °C Package Circuit 12 ARMS 125 °C 360 VDC 0.8 115 % 1.56 V SIP Three Phase Inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes RoHS COMPLIANT • Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.