IRF737LC Overview
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.
IRF737LC Key Features
- Reduced Gate Drive Requirement
- Enhanced 30 V VGS Rating
- Reduced Ciss, Coss, Crss
- Extremely High Frequency Operation
- Repetitive Avalanche Rated
- Lead (Pb)-free Available
