Vishay IRF737LC
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristics of Power MOSFETs offer the designer a new standard in power transistors for switching applications.| Part No. | IRF737LC |
|---|---|
| Datasheet | IRF737LC Download |
| Manufacturer |  Vishay |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Reduced Gate Drive Requirement● Enhanced 30 V VGS Rating
● Reduced Ciss, Coss, Crss
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
● Lead (Pb)-free Available Available RoHS* COMPLIANT
DESCRIPTION
Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. TO-220 IRF737LCPbF SiHF737LC-E3 IRF737LC SiHF737LCABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V...
