IRF830B - D Series Power MOSFET

Vishay

Key Features

Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS).
Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

IRF830B d series power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRF830B
Manufacturer	Vishay
File Size	293.17 KB
Description	D Series Power MOSFET
Datasheet	IRF830B Datasheet

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www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 20 3 5 Single 1.5 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching • Material categorization: for definitions of compliance please see www.vishay.