IRF830B Description
IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 20 3 5 Single 1.5 TO-220AB S D G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free.
IRF830B Key Features
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg