IRF9Z34 Datasheet | Vishay

.vishay. Vishay Siliconix Power MOSFET TO-220AB D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (n C) Qgs (n C) Qgd (n C) Configuration -60 VGS = -10 V 34 9.9 16 Single Features - Dynamic d V/dt rating - Repetitive avalanche rated Available - P-channel - 175 °C operating temperature Available - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF9Z34Pb F IRF9Z34Pb...