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IRF9Z34L - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Surface Mount (IRF9Z34S, SiHF9Z34S) Available.
  • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) RoHS.
  • 175 °C Operating Temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 34 9.9 16 Single 0.14 S I2PAK (TO-262) D2PAK (TO-263) G SD D G S G D P-Channel MOSFET FEATURES • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) Available • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) RoHS* • 175 °C Operating Temperature COMPLIANT • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.