Datasheet4U Logo Datasheet4U.com

IRF9Z34L - Power MOSFET

Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Surface Mount (IRF9Z34S, SiHF9Z34S) Available.
  • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) RoHS.
  • 175 °C Operating Temperature.

📥 Download Datasheet

Datasheet preview – IRF9Z34L

Datasheet Details

Part number IRF9Z34L
Manufacturer Vishay
File Size 114.11 KB
Description Power MOSFET
Datasheet download datasheet IRF9Z34L Datasheet
Additional preview pages of the IRF9Z34L datasheet.

📁 Similar Datasheet

  • IRF9Z34L - Power MOSFET (International Rectifier)
  • IRF9Z34LPBF - Surface Mount (International Rectifier)
  • IRF9Z34 - Power MOSFET (International Rectifier)
  • IRF9Z34N - Power MOSFET (International Rectifier)
  • IRF9Z34N - P-Channel MOSFET (INCHANGE)
  • IRF9Z34NL - Power MOSFET (International Rectifier)
  • IRF9Z34NL - P-Channel MOSFET (INCHANGE)
  • IRF9Z34NLPBF - MOSFET (International Rectifier)
  • IRF9Z34NPbF - Power MOSFET (International Rectifier)
  • IRF9Z34NS - Power MOSFET (International Rectifier)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 34 9.9 16 Single 0.14 S I2PAK (TO-262) D2PAK (TO-263) G SD D G S G D P-Channel MOSFET FEATURES • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) Available • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) RoHS* • 175 °C Operating Temperature COMPLIANT • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Published: |