IRF9Z34L Datasheet | Vishay

IRF9Z34S, Si HF9Z34S, IRF9Z34L, Si HF9Z34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration - 60 VGS = - 10 V 34 9.9 16 Single I2PAK (TO-262) D2PAK (TO-263) D P-Channel MOSFET Features - Advanced Process Technology - Surface Mount (IRF9Z34S, Si HF9Z34S) Available - Low-Profile Through-Hole (IRF9Z34L, Si HF9Z34L) Ro HS- - 175 °C Operating Temperature PLIANT - Fast Switching - P-Channel - Fully Avalanche Rated - Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9Z34L, Si HF9Z34L) is available for low-profile applications. ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free IRF9Z34SPb F Si HF9Z34S-E3 Sn...