Datasheet Details
| Part number | IRFD113 |
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| Manufacturer | Vishay |
| File Size | 241.97 KB |
| Description | Power MOSFET |
| Datasheet |
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The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
| Part number | IRFD113 |
|---|---|
| Manufacturer | Vishay |
| File Size | 241.97 KB |
| Description | Power MOSFET |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRFD113 | (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR | GE Solid State |
| IRFD110 | N-Channel Power MOSFET | Intersil Corporation |
| IRFD110 | Power MOSFET | International Rectifier |
| IRFD110 | FIELD EFFECT POWER TRANSISTOR | GE |
| IRFD110PBF | HEXFET Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRFD110 | Power MOSFET |
| IRFD120 | Power MOSFET |
| IRFD123 | Power MOSFET |
| IRFD014 | Power MOSFET |
| IRFD014PbF | Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.