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IRFD9110 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • P-channel.
  • Fast switching.
  • 175 °C operating temperature.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFD9110 Vishay Siliconix Power MOSFET HVMDIP S G S G D D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • Fast switching • 175 °C operating temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.