Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
Key Features
Isolated package.
High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
Available.
Sink to lead creepage distance = 4.8 mm
Available.
Dynamic dV/dt rating.
Low thermal resistance.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note.
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb.
Full PDF Text Transcription for IRFI740G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFI740G. For precise diagrams, and layout, please refer to the original PDF.
Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 66 10 33 Single 0.55 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available • Sink to lead creepage distance = 4.8 mm Available • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the inf