Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
Key Features
Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS.
Full PDF Text Transcription for IRFI744G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFI744G. For precise diagrams, and layout, please refer to the original PDF.
Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 80 12 41 Single 0.63 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Dist. = 4.8 mm COMPLIANT • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
IRFI744G Datasheet
