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IRFPC60LC - Power MOSFET

Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Isolated Central Mounting Hole.
  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 600 VGS = 10 V 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single 0.40 D TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Isolated Central Mounting Hole • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.
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