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IRFPC60LC Datasheet Power MOSFET

Manufacturer: Vishay

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General Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standart in power transistors for switching applications.

Overview

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 600 VGS = 10 V 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single 0.

Key Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Isolated Central Mounting Hole.
  • Dynamic dV/dt Rated.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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