Datasheet4U Logo Datasheet4U.com

IRFPC60LC-P - HEXFET Power MOSFET

Description

This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.

Features

  • 59 ) 4 1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B - 2X 5.50 (.2 1 7) 4.50 (.1 7 7) NO TE S: 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C . 2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) C A S 0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 2.60 (.10 2) 2.20 (.08 7) TO-247AC Part Marking Information E X A M P L E : T H I.

📥 Download Datasheet

📁 Similar Datasheet

  • IRFPC60LC - Power MOSFET (Vishay)
  • IRFPC60LC - N-Channel MOSFET (INCHANGE)
  • IRFPC60 - Power MOSFET (Vishay)
  • IRFPC40 - Power MOSFET (Vishay)
  • IRFPC40R - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFPC42R - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRFPC50 - Power MOSFET (Vishay)
  • IRFPC50A - Power MOSFET (Vishay)
  • IRFP044 - Power MOSFET (Power MOSFET)
  • IRFP044 - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V G S RDS(on) = 0.40Ω ID = 16A Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
Published: |