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Power MOSFET
IRL540S, SiHL540S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
100 VGS = 5 V
64
Qgs (nC)
9.4
Qgd (nC)
27
Configuration
Single
0.077
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.