Datasheet Summary
.vishay.
MBR1090-M3, MBR10100-M3
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
TO-220AC
PIN 1 PIN 2
2 1
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
10 A 90 V, 100 V
150 A 0.65 V 150 °C TO-220AC
Diode variations
Single die
Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies,...