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MBR2090CT-E3 - Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number MBR2090CT-E3
Manufacturer Vishay
File Size 204.12 KB
Description Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR2090CT-E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier TO-220AB TMBS® ITO-220AB MBR2090CT MBR20100CT PIN 1 PIN 2 3 2 1 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 CASE PIN 3 D2PAK (TO-263AB) K 123 2 1 MBRB2090CT MBRB20100CT PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package Circuit configuration 2 x 10 A 90 V to 100 V 150 A 0.