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MBR2090CT-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number MBR2090CT-M3
Manufacturer Vishay
File Size 118.17 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR2090CT-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com MBR2090CT-M3, MBR20100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 10 A 90 V, 100 V 150 A 0.65 V 150 °C TO-220AB Diode variation Common cathode FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.