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N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V
SC-75A
D 3
ID (A) 0.5 0.2 0.2 0.05
Qg (TYP.) 0.72 nC
1 G Top View
2 S
Marking Code: L
Ordering Information: Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET • 100 % Rg tested • Gate-source ESD protected: 1000 V • Material categorization:
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SI1002R Datasheet
