Vishay SI1903DL
Dual P-Channel 2.5-V (G-S) MOSFET
| Part No. | SI1903DL |
|---|---|
| Datasheet | SI1903DL Download |
| Manufacturer |  Vishay |
| Description | Dual P-Channel 2.5-V (G-S) MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS -0.25 0.30 0.16 -55 to 150 Symbol VDS VGS 5 secs Steady State -20 "12 Unit V "0.44 "0.31 "1.0 "0.41 "0.30 A -0.23 0.27 0.14 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71081 S-21374—Rev. B, 12-Aug-02 Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Si1903DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on...
