Vishay SI2303DS
P-Channel MOSFET
| Part No. | SI2303DS |
|---|---|
| Datasheet | SI2303DS Download |
| Manufacturer |  Vishay |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS –30 VGS "20 Continuous Drain Current (TJ = 150_C) (surface mounted on FR4 board, t v 5 sec) Pulsed Drain Currenta Continuous Source Current (MOSFET Diode Conduction) (surface mounted on FR4 board, t v 5 sec) Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg –1.7 –1.4 –10 –1.25 1.25 0.8 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (surface mounted on FR4 board, t v 5 sec) Maximum Junction-to-Ambient (surface mounted on FR4 board) Symbol RthJA Notes a. Pulse width limited by maximum junction temperature. For SPICE model information via the Worldwide Web: Document Number: 70770 S-49557—Rev. B, 27-Apr-98 Typical 100 166 Unit _C/W S FaxBack 408-970-5600 2-1 Si2303DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NO...
