SI2307DS Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25_C UNLSS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –30 "20 –3 –2.5 –12 –1.25 1.25 Unit V A W 0.8 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface mounted on FR4 board. b. t v 5 sec. Document Number: 70843 S-60570—Rev. A, 16-Nov-98 S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 Si2307DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-Resistance Drain-Source On Resistancea Forward Transconduct...