Vishay SI2314EDS
N-Channel MOSFET
| Part No. | SI2314EDS |
|---|---|
| Datasheet | SI2314EDS Download |
| Manufacturer |  Vishay |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● TrenchFET® Power MOSFET
● ESD Protected: 3000 V
APPLICATIONS
● LI-lon Battery Protection D G1 S2 3D Top View Si2314EDS (C4)* *Marking Code Ordering Information: Si2314EDS-T1-E3 (Lead (Pb)-free) Si2314EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) 3 kΩ G N-Channel SABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 4.9 3.77 3.9 3.0 Pulsed Drain Currentb IDM 15 Avalanche Currentb Single Avalanche Energy L = 0.1 mH IAS EAS 15 11.25 Continuous Source Current (Diode Conduction)a IS 1.0 Power Dissipationa TA = 25 °C TA = 70 °C PD 1.25 0.75 0.80 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b.
