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SI3481DV - P-Channel 30-V (D-S) MOSFET

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Features

  • TrenchFET® Power MOSFET.

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Datasheet Details

Part number SI3481DV
Manufacturer Vishay
File Size 88.52 KB
Description P-Channel 30-V (D-S) MOSFET
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P-Channel 30-V (D-S) MOSFET Si3481DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.048 at VGS = - 10 V - 30 0.079 at VGS = - 4.5 V ID (A) - 5.3 - 4.1 FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch RoHS COMPLIANT 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3481DV-T1-E3 (Lead (Pb)-free) (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 5.3 - 4.2 - 4.0 - 3.2 Pulsed Drain Current IDM - 20 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
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