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P-Channel 30-V (D-S) MOSFET
Si3483DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.035 @ VGS = −10 V −30
0.053 @ VGS = −4.5 V
ID (A)
−6.2 −5.0
FEATURES D TrenchFETr Power MOSFET
APPLICATIONS D Load Switch
3 mm
TSOP-6 Top View 16 25 34
2.85 mm Ordering Information: Si3483DV-T1—E3 (Lead Free)
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage Gate-Source Voltage
VDS −30 VGS "20
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
ID
IDM IS
PD TJ, Tstg
−6.2
−4.7
−4.9
−3.7
−25
−1.
SI3483DV Datasheet
