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SI4162DY - N-Channel MOSFET

Key Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet Details

Part number SI4162DY
Manufacturer Vishay
File Size 221.22 KB
Description N-Channel MOSFET
Datasheet download datasheet SI4162DY Datasheet

Full PDF Text Transcription for SI4162DY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI4162DY. For precise diagrams, and layout, please refer to the original PDF.

N-Channel 30-V (D-S) MOSFET Si4162DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0079 at VGS = 10 V 30 0.010 at VGS = 4.5 V ID (A) 19.3a 17.1a Qg (Typ.) 8.8 nC...

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VGS = 10 V 30 0.010 at VGS = 4.5 V ID (A) 19.3a 17.1a Qg (Typ.) 8.8 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC - High Side - VRM - POL - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.

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