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SI4168DY - N-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.

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Datasheet preview – SI4168DY

Datasheet Details

Part number SI4168DY
Manufacturer Vishay
File Size 220.85 KB
Description N-Channel MOSFET
Datasheet download datasheet SI4168DY Datasheet
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Full PDF Text Transcription

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N-Channel 30-V (D-S) MOSFET Si4168DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0057 at VGS = 10 V 30 0.0076 at VGS = 4.5 V ID (A)a 24 21 Qg (Typ.) 13.8 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Notebook DC/DC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.
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