Vishay SI4490DY
N-Channel MOSFET
| Part No. | SI4490DY |
|---|---|
| Datasheet | SI4490DY Download |
| Manufacturer |  Vishay |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFETs
● Compliant to RoHS Directive 2002/95/EC D S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free) Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 4.0 2.85 3.2 2.3 Pulsed Drain Current IDM 40 Avalanch Current L = 0.1 mH IAS 15 Continuous Source Current (Diode Conduction)a IS 2.6 1.3 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.1 1.56 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit °C/W Document Number: 71341 S09-0705-Rev.
