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SI5448DU - MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • 100 % Rg and UIS tested.
  • Thermally enhanced PowerPAK ChipFET package -Compact footprint area - less than 6.09 mm2 -Thin 0.8 mm profile.
  • 56 % lower RDS(ON) than the prior generation.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 1.9 mm.

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www.vishay.com Si5448DU Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® ChipFET® Single D S D 6 D 7 8 5 1 3.0 mm Top View 1 S 9 4 3 D 2 D D G Bottom View FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Thermally enhanced PowerPAK ChipFET package -Compact footprint area - less than 6.09 mm2 -Thin 0.8 mm profile • 56 % lower RDS(ON) than the prior generation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1.9 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration 40 0.00775 0.00947 12.