The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si5445DC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)
0.035 @ VGS = --4.5 V --8 0.047 @ VGS = --2.5 V 0.062 @ VGS = --1.8 V
ID (A)
7.1 6.2 5.7
1206-8 ChipFETt
1
D D D D S D D G
S
G
Marking Code BC XX Lot Traceability and Date Code D P-Channel MOSFET
Part # Code Bottom View
Ordering Information: Si5445DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
--8
Steady State
8
Unit
V
7.
SI5445DC Datasheet
