SIA433EDJ Description
New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.018 at VGS = - 4.5 V 0.026 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A) - 12a - 12a -4 20 nC Qg.
SIA433EDJ Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- New Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
- 100 % Rg Tested
- Built in ESD Protection with Zener Diode
- Typical ESD Performance: 1800 V
- pliant to RoHS Directive 2002/95/EC