SIA468DJ Description
SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free) 1.
SIA468DJ Key Features
- TrenchFET® Gen IV power MOSFET
- 100 % Rg tested
- The highest continuous drain current capability
- Very low RDS-Qg FOM and Qgd elevate efficiency
- Increase power density of your design
- Material categorization: for definitions of pliance please see .vishay./doc?99912