SiA466EDJ Description
Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. 0.0095 at VGS = 10 V 0.0111 at VGS = 6 V 0.0130 at VGS = 4.5 V ID (A) a 25 25 25 6.3 nC Qg (TYP.).
SiA466EDJ Key Features
- TrenchFET® power MOSFET
- Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
- Typical ESD protection: 2500 V (HBM)
- 100 % Rg Tested
- Material categorization: For definitions of pliance please see .vishay./doc?99912
SiA466EDJ Applications
- For smart phones and mobile puting