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SIA922EDJ - Dual N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • Typical ESD protection: 1500 V (HBM).
  • 100 % Rg tested.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 1 S1 D1 D1 6 G2 5 2.05 mm S2 4 2 G1 D2 3 D2 2.05 mm Ordering Information: SiA922EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Part # code CIX XXX Marking Code Lot Traceability and Date.

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Datasheet Details

Part number SIA922EDJ
Manufacturer Vishay
File Size 224.64 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SIA922EDJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiA922EDJ Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.064 at VGS = 4.5 V 0.072 at VGS = 3.0 V 0.080 at VGS = 2.5 V 0.400 at VGS = 1.8 V ID (A) 4.5a 4.5a 4.5a 0.2 Qg (TYP.) 3.5 nC PowerPAK SC-70-6 Dual FEATURES • TrenchFET® Power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V (HBM) • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 S1 D1 D1 6 G2 5 2.05 mm S2 4 2 G1 D2 3 D2 2.