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SiA907EDJT
www.vishay.com
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9 nC
FEATURES
• TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www.vishay.