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SiA907EDJT-T4-GE3 - Dual P-Channel 20 V (D-S) MOSFET

Download the SiA907EDJT-T4-GE3 datasheet PDF. This datasheet also covers the SiA907EDJT variant, as both devices belong to the same dual p-channel 20 v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • TrenchFET® power MOSFET.
  • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • Typical ESD protection: 1500 V HBM.
  • High speed switching.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiA907EDJT-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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SIA923EDJ Dual P-Channel 20-V (D-S) MOSFET Vishay Siliconix
SIA414DJ Dual N-Channel 8-V (D-S) MOSFET Vishay Siliconix
SIA429DJT P-Channel 20V (D-S) MOSFET Vishay Siliconix

Other Datasheets by Vishay

Part Number Description
SiA907EDJT-T1-GE3 Dual P-Channel 20 V (D-S) MOSFET
SiA907EDJT Dual P-Channel 20 V (D-S) MOSFET
SiA906EDJ Dual N-Channel 20-V (D-S) MOSFET
SiA910EDJ Dual N-Channel 12 V (D-S) MOSFET
SiA911ADJ Dual P-Channel 20-V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9 nC FEATURES • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www.vishay.