SiA907EDJT-T4-GE3 Datasheet | Vishay

SiA907EDJT .vishay. Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9 nC Features - TrenchFET® power MOSFET - Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance - Typical ESD protection: 1500 V HBM - High speed switching - Material categorization: For definitions of pliance please see .vishay./doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2 APPLICATIONS 1 S1 - Charger Switch, Load Switch for Portable Devices - Battery Management S1 S2 Marking Code: DM Ordering Information: SiA907EDJT-T1-GE3 (Lead...