SiA907EDJT-T1-GE3 Datasheet PDF - Vishay Dual P-Channel 20 V (D-S) MOSFET Specs

SiA907EDJT-T1-GE3 - Dual P-Channel 20 V (D-S) MOSFET

This page provides the datasheet information for the SiA907EDJT-T1-GE3, a member of the SiA907EDJT Dual P-Channel 20 V (D-S) MOSFET family.

Datasheet Summary

Features

TrenchFET® power MOSFET.
Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
Typical ESD protection: 1500 V HBM.
High speed switching.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 PowerPAK® SC-70-6L Dual S2 4 G2 5 D1 6 D1 D2.

Datasheet Details

Part number	SiA907EDJT-T1-GE3
Manufacturer	Vishay
File Size	249.56 KB
Description	Dual P-Channel 20 V (D-S) MOSFET
Datasheet	SiA907EDJT-T1-GE3 Datasheet
Additional preview pages of the SiA907EDJT-T1-GE3 datasheet.

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Full PDF Text Transcription

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SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.057 at VGS = -4.5 V 0.095 at VGS = -2.5 V ID (A) -4.5 a -4.5 a Qg (TYP.) 4.9 nC FEATURES • TrenchFET® power MOSFET • Thermally enhanced Thin PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V HBM • High speed switching • Material categorization: For definitions of compliance please see www.vishay.

Published: Oct 30, 2014 |