SIHB24N65EF Overview
SiHB24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 17 36 Single 0.156 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free.
SIHB24N65EF Key Features
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance