Download SIHB24N65EF Datasheet PDF
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SIHB24N65EF Key Features

  • Fast body diode MOSFET using E series technology
  • Reduced trr, Qrr, and IRRM
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Low switching losses due to reduced Qrr
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)
  • Material categorization: for definitions of pliance

SIHB24N65EF Description

SiHB24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 17 36 Single 0.156 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free.