SIHG25N60EFL Description
SiHG25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge PRODUCT SUMMARY VDS (V) at TJ max. () at 25 °C Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single TO-247AC 0.127 D S D G G S N-Channel MOSFET.
SIHG25N60EFL Key Features
- Reduced figure-of-merit (FOM): Ron x Qg
- Fast body diode MOSFET using E series
- Reduced trr, Qrr, and IRRM
- Increased robustness due to low Qrr
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance