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SIHG25N60EFL - MOSFET

Key Features

  • Reduced figure-of-merit (FOM): Ron x Qg.
  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Increased robustness due to low Qrr.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiHG25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 75 17 19 Single TO-247AC 0.127 D S D G G S N-Channel MOSFET FEATURES • Reduced figure-of-merit (FOM): Ron x Qg • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Increased robustness due to low Qrr • Low input capacitance (Ciss) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.